Error Estimates for a Finite Element Method for the Drift-diffusion Semiconductor Device Equations: the Zero Diffusion Case

نویسنده

  • IOANA TRIANDAF
چکیده

In this paper new error estimates for an explicit finite element method for numerically solving the so-called zero-diffusion unipolar model (a one-dimensional simplified version of the drift-diffusion semiconductor device equations) are obtained. The method, studied in a previous paper, combines a mixed finite element method using a continuous piecewise-linear approximation of the electric field, with an explicit upwinding finite element method using a piecewise-constant approximation of the electron concentration. By using a suitable extension of Kuznetsov approximation theory for scalar conservation laws, it is proved that, under proper hypotheses on the data, the ¿"''(L'J-error between the approximate and exact electron concentrations of the zero-diffusion unipolar model is of order Ax1/2 . These estimates are sharp.

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تاریخ انتشار 2010